Authors
Sugavaneshwar R P and Karuna Kar Nanda
Summary
The protocol describes an uninterrupted and reusable source for the controlled growth of nanowires. This is achieved by using a cap (substrate) over the source materials preventing the oxidation of the source. The cap should have high temperature stability and negligible solid solubility with the source materials up to very high temperature typically far more than the reaction temperature required for nanostructure growth. The idea is to protect the source from high temperature oxidation/degradation during growth thereby ensuring continuous supply of vapour for the growth of nanowire without any apparent limitations. Protection of source could also ensure the use of source material in multiple depositions for growth of nanowires. The protocol for growth of ZnO nanowires by using Si cap on Zn powder source is provided.Further details
The protocol was published on Protocol Exchange on 30 January 2013. To see the entire protocol, click on the source link.Advertisement
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