Authors
Nicolas Clement, Katsuhiko Nishiguchi, Akira Fujiwara, and Dominique Vuillaume
Summary
Low frequency noise gives additional informations to DC current in nanodevices such as estimation of number/position of defects in nanotransistors [1-14] and inelastic resonant energy levels in molecular devices [15-16]. It provides also the charge sensitivity limit [1,5] for sensors and memories. However, low frequency noise measurements remain marginal for device electrical characterization which is probably due to additional efforts required for non specialists to measure and analyse such signals. This is particularly true for nanodevices where current level is low and noise more difficult to measure. Here, we detail a protocol including experimental setup optimization, developed automation softwares and data analysis. An example of low frequency noise study of a silicon nanowire transistor is shown.Further details
The protocol was published on Protocol Exchange on 3 December 2010. To see the entire protocol, click on the source link.Advertisement
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