Development of Polyimides with Low Dielectric Loss Tangent by Incorporating Polysiloxanes with Phenyl Side Groups.

Authors

Riku Takahashi, Ririka Sawada, Kan Hatakeyama-Sato, Yuta Nabae, Shinji Ando, Teruaki Hayakawa

Published in

Macromolecular rapid communications. Pages e2500115. Apr 07, 2025. Epub Apr 07, 2025.

Abstract

Owing to their low dielectric constant (D_k), processability, and mechanical properties, siloxane-based polymers have attracted attention as insulating materials for next-generation communication. However, a major challenge regarding siloxane-containing materials is their high dielectric loss tangent (dissipation factor) (D_f). A polymer is designed and synthesized by combining polysiloxanes with phenyl side groups on the main chain and a polyimide structure (polysiloxane-imide) to improve the D_f value. Compared with conventional dimethylsiloxane-based polymers, the resulting polysiloxane-imide, obtained as a bendable, self-supporting film, exhibits a significantly reduced D_f value. The rigidity of the phenyl group-containing polysiloxane presumably contributes to the improvement in the D_f value. Furthermore, polysiloxane-imides exhibit excellent hydrophobicity and high heat resistance with their 5% weight loss temperature of over 400 °C. The synthesized polysiloxane-imides with phenyl side groups, which possess various properties, including low D_k, low D_f, and excellent hydrophobicity, are expected to contribute to the future practical application of siloxane-based insulating materials.

PMID:
40193067
Bibliographic data and abstract were imported from PubMed on 07 Apr 2025.

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