Authors
Ilias Skandalos, Thalía Domínguez Bucio, Lorenzo Mastronardi, Guomin Yu, Aaron Zilkie, Frederic Y Gardes
Published in
Communications engineering. Volume 4. Issue 1. Pages 82. May 01, 2025. Epub May 01, 2025.
Abstract
The exponential growth of data-intensive artificial intelligence necessitates ultra-fast and energy efficient transceivers in data centres. Quantum-confined Stark effect (QCSE) modulators offer promising solutions, combining high-speed modulation with minimal footprint and superior energy efficiency. Here, we demonstrate a monolithically integrated O-band Ge/SiGe QCSE modulator operating at 100 Gb s-1, seamlessly integrated with silicon nitride (SiN) waveguides on both silicon and silicon-on-insulator substrates. Our modulator achieves <1 dB coupling loss, <63 fJ bit-1 energy consumption, and >5 dB static extinction ratio, while maintaining performance across a 20-80 °C temperature range. Leveraging CMOS-compatible fabrication processes, we incorporate multiple quantum-well stacks grown at wafer scale on silicon, enabling large-scale production. The modulator's substrate-agnostic integration with back-end of line grown SiN layers, presents a scalable approach for cost-effective co-integration of electronic and photonic components. This work advances high-speed, energy-efficient optical modulators and paves the way for next-generation photonic integrated circuits in data centre interconnects.
PMID:
40312499
Bibliographic data and abstract were imported from PubMed on 02 May 2025.
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