Engineered high endurance in WO₃-based resistive switching devices via a guided filament approach.

Authors

Ziyi Yuan, Babak Bakhit, Yi-Xuan Liu, Zhuotong Sun, Giulio I Lampronti, Xinjuan Li, Simon M Fairclough, Benson K Tsai, Abhijeet Choudhury, Caterina Ducati, Haiyan Wang, Markus Hellenbrand, Judith L MacManus-Driscoll

Published in

Science advances. Volume 11. Issue 20. Pages eadt9789. May 16, 2025. Epub May 16, 2025.

Abstract

Resistive switching devices are promising candidates for the next generation of nonvolatile memory and neuromorphic computing applications. Despite the advantages in retention and on/off ratio, filamentary-based memristors still suffer from challenges, particularly endurance (flash being a benchmark system showing 10⁴ to 10⁶ cycles) and uniformity. Here, we use WO₃ as a complementary metal-oxide semiconductor-compatible switching oxide and demonstrate a proof-of-concept materials design approach to enhance endurance and device-to-device uniformity in WO₃-based memristive devices while preserving other performance metrics. These devices show stable resistive switching behavior with >10⁶ cycles, >10⁵-second retention, >10 on/off ratio, and good device-to-device uniformity, without using current compliance. All these metrics are achieved using a one-step pulsed laser deposition process to create self-assembled nanocomposite thin films that have regular guided filaments of ≈100-nanometer pitch, preformed between WO₃ grains and interspersed smaller Ce₂O₃ grains.

PMID:
40378214
Bibliographic data and abstract were imported from PubMed on 17 May 2025.

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