Authors
Zhen Hu, Yuru Li, Ruifeng Zhong, Yan Li, Shunyu Yao, Siqing Zeng, Hongfei Chen, Tao Zhang, Zhaohuan Ao, Zhaohui Li
Published in
ACS nano. May 21, 2025. Epub May 21, 2025.
Abstract
Chalcogenide integrated photonic devices have garnered widespread attention due to their excellent wideband transparency. However, current fabrication methods primarily rely on mature silicon-based CMOS processes, which are not readily adaptable to chalcogenides, significantly hindering their development. Here, we present a flexible fabrication approach that judiciously leverages the intrinsic oxidation susceptibility of chalcogenide materials, transforming chalcogenide thin films into a lithography-free canvas for versatile integrated photonic devices. Using antimony sulfide (Sb2S3) as an example, we demonstrate low-threshold laser-induced local oxidation using a continuous laser, achieving a refractive index modulation exceeding 0.7 and a spatial resolution of 0.6 μm in the near-infrared region. This technique enables flexible fabrication of various chalcogenide photonic devices. Based on this technique, we further fabricate a dynamic planar Fresnel zone plate, demonstrating dynamic beam focusing by exploiting the phase-change property of Sb2S3, as well as high-precision spatial-spectral reconstruction at near-infrared using a millimeter-scale chalcogenide metasurface array. Our findings reveal the potential of chalcogenide thin films as a promising canvas for advanced photonic applications, providing a simplified and versatile fabrication pathway that significantly advances the field of chalcogenide integrated photonic devices.
PMID:
40397850
Bibliographic data and abstract were imported from PubMed on 22 May 2025.
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