Authors
Tangjun Zhang, Zhenyu Yang, Tianyang Feng, Tao Liu, Xiaofei Qian, Hai Deng
Published in
ACS applied materials & interfaces. Jun 05, 2025. Epub Jun 05, 2025.
Abstract
As artificial synaptic transistor devices become increasingly important in simulating biological synaptic functions, it is crucial to design high-performance synaptic transistor memory using a facile and high-efficiency process. Herein, we demonstrate an organic synaptic transistor memory fabricated using poly(pentadecafluorooctyl methacrylate)-block-poly(4-vinylphenol) supramolecules with 1-aminopyrene (PPDFMA-b-(P4HS-APy)) as the polymer electret. The solution-processable PPDFMA-b-(P4HS-APy) can rapidly self-assemble into an ordered nanostructure with sub-6 nm domain size after annealing at a low temperature of 80 °C for only 10 min, which defines pyrene moieties into hydrophilic P4HS blocks surrounded by a hydrophobic and insulating PPDFMA matrix to form an effective electret. By optimizing the composition and tuning the nanostructure of the electret, a high-performance transistor device with a large memory window of 74 V, a high on/off current ratio of ∼105, and outstanding memory stability over 104 s was obtained. Additionally, a 6 × 6 synaptic transistor array was prepared, which exhibits good uniformity and can replicate versatile biological synaptic behaviors. Neuromorphic computing simulations constructed with the synaptic transistor reveal a high recognition accuracy of 91.6%. This study offers a strategy for preparing high-performance synaptic transistor devices using a facile and practical process.
PMID:
40472261
Bibliographic data and abstract were imported from PubMed on 06 Jun 2025.
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