Ferroelectricity in Atomic Layer Deposited Wurtzite Zinc Magnesium Oxide Zn_1-xMg_xO.

Authors

Benjamin L Aronson, Kyle P Kelley, Ece Gunay, Ian Mercer, Bogdan Dryzhakov, Jon-Paul Maria, Elizabeth C Dickey, Susan Trolier-McKinstry, Jon F Ihlefeld

Published in

Nano letters. Jun 09, 2025. Epub Jun 09, 2025.

Abstract

Conformal deposition of wurtzite ferroelectrics, which is needed for their use in scaled nonvolatile memories, is challenging using current physical vapor deposition techniques. To overcome the conformality barrier, this work demonstrates ferroelectricity in wurtzite Zn_1-xMg_xO thin films prepared by plasma-enhanced atomic layer deposition, which is a non-line-of-sight deposition method. Films ranging in composition from x = 0.00 to x = 0.58 are predominantly wurtzite phase and exhibit a (0001)-texture. Increasing the magnesium content decreases the c/a ratio, increases the optical bandgap energy, increases the piezoelectric response, and enables polarization reversal. Clear polarization switching is demonstrated in 50 nm thick Zn_1-xMg_xO films by piezoresponse force microscopy in compositions containing x = 0.46 and x = 0.58.

PMID:
40489795
Bibliographic data and abstract were imported from PubMed on 10 Jun 2025.

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