Authors
Wenchao Luo, Hu Guo, Xinshuo Zhu, Jinpeng Tian, Zijin Wei, Minhan Liu, Cheng Wang, Hao Sun, Yuan Jia
Published in
Nanoscale. Jun 12, 2025. Epub Jun 12, 2025.
Abstract
The advancement of ultra-thin graphene field-effect transistors (GFET) is essential for the realization of high-performance flexible electronics in applications such as biointerfaces, wearable devices, and soft robotics. In this study, a wafer-scale fabrication method is developed, combining spin-coated polyimide substrates with standard microfabrication and laser lift-off techniques to produce GFET arrays on 5 μm-thick flexible films. This approach overcomes challenges associated with handling and exfoliating ultra-thin substrates, achieving a device density of 80 devices cm-2 and a yield of 79%, surpassing previously reported values. The fabricated devices exhibit balanced ambipolar transport with electron and hole mobilities of approximately 279 cm2 V-1 s-1, and retain over 90% of their initial mobility after 2000 bending cycles. Field-effect characteristics are preserved under bending radii down to 5 mm, demonstrating notable mechanical robustness for solid-gated flexible GFETs. Strain sensing performance is evaluated, yielding a gauge factor of 430 and a minimum detectable strain of 0.005%. Compared with commercial metal strain gauges, the devices display approximately eightfold greater sensitivity and maintain stable responses during repeated deformation cycles. These findings provide a robust fabrication platform for ultra-thin GFETs, facilitating their integration into flexible electronic systems that demand high sensitivity, mechanical durability, and conformability.
PMID:
40501399
Bibliographic data and abstract were imported from PubMed on 12 Jun 2025.
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