Authors
Mattia Scagliotti, Antonio Valletta, Silvia Milita, Luigi Mariucci, Gino Giusi, Hussam Bouaamlat, Ari Paavo Seitsonen, Paolo Branchini, Luca Tortora, Matteo Rapisarda
Published in
ACS applied materials & interfaces. Jun 18, 2025. Epub Jun 18, 2025.
Abstract
The electrical performance of organic thin-film transistors (OTFTs) based on DNTT as the semiconductor active layer (DNTT, which stands for dinaphtho [2,3-b:2',3'-f] thieno [3,2-b] thiophene) is investigated and related to the structural properties of the organic films grown on SiO2 and Cytop substrates. Conventional current-voltage measurements and high-sensitivity low-frequency measurements show a lower mobility and correspondingly higher defect density for DNTT/SiO2 devices. Morphological and structural characterizations of DNTT films grown on the two dielectrics were performed using atomic force microscopy (AFM) and X-ray diffraction (XRD), revealing a highly ordered crystalline structure. Consistent with DFT simulation results, morphological analysis shows that the semiconductor films are layered, with DNTT molecules arranged with their longest axis perpendicular to the substrate. However, in only DNTT/SiO2 films, some molecules were found to be ordered and arranged parallel to the substrate. This "horizontal" orientation causes differences in charge transport properties in the semiconductor films grown on SiO2, reducing the field-effect mobility. TCAD simulations indicate that this horizontal molecular orientation can be modeled as highly defective regions at semiconductor grain boundaries, consistent with low-frequency noise measurement results.
PMID:
40532035
Bibliographic data and abstract were imported from PubMed on 19 Jun 2025.
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