Authors
Souren Grigorian, Anton Davydok, Linda Grodd, Yuriy Luponosov, Sergey Ponomarenko, Ilaria Fratoddi
Published in
Discover nano. Volume 20. Issue 1. Pages 138. Aug 16, 2025. Epub Aug 16, 2025.
Abstract
Grazing Incident Wide Angle X-ray Scattering (GIWAXS) studies on organic field-effect transistors (OFETs) fabricated with an aliphatic functionalized α,α'-quinquethiophene (i.e. 5,5''''-dihexyl-2,2':5',2'':5'',2''':5''',2''''-quinquethiophene, DH5T) thin film, were carried out. The structure-property relationships of the semiconductor material were investigated. A detailed, spatially resolved microstructural characterization of the active layer was carried out with the aim of understanding the role of the film's microstructure on electrical performance. For this purpose, a custom-made setup designed for in-operando tests of OFETs was used, allowing a correlation under measured conditions of the complex microstructure with the thin film electrical behavior, under operating conditions. The GIWAXS measurements revealed a significant anisotropy of the DH5T thin films, under source-drain applied voltages (Vsd). Particularly notable variations were observed for both in-plane and out-of-plane directions. Upon applying the Vsd, the microstructure remained relatively stable in the out-of-plane (001) direction, suggesting that this orientation is less affected by the applied voltages. However, in the in-plane (020) direction, an increase of the π-π stacking of the DH5T molecules was found, indicating a stronger response of the microstructure to the applied voltage. Notably, a higher tensile strain, exceeding 1%, was observed at a Vsd of - 10 V, suggesting that the application of voltage induces significant structural reorganization in the thin film, which may have implications for optimizing the performance of OFETs in practical applications.
PMID:
40817947
Bibliographic data and abstract were imported from PubMed on 16 Aug 2025.
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