Authors
Yue Bai, Wenlong Cai, Zanhong Chen, Daoqian Zhu, Shiyang Lu, Jiaxu Li, Ao Du, Kaihua Cao, Guang Yang, Hongxi Liu, Kewen Shi, Weisheng Zhao
Published in
Nano letters. Oct 01, 2025. Epub Oct 01, 2025.
Abstract
Current-induced antiferromagnetic (AFM) switching is critical for advancing spintronic technologies and expanding their functional landscape. Recently, the orbital Hall effect (OHE) has emerged as a promising mechanism for efficient control of AFM orders, though experimental validation has remained elusive. In this work, we successfully demonstrate efficient orbital-to-spin conversion in Ru/IrMn heterostructure, which enables significant enhancement of both OHE-induced damping-like and field-like torque efficiencies of 0.86 × 105 Ω-1m-1 and 3.01 × 105 Ω-1m-1, respectively. We further investigate the underlying orbital and spin diffusion behavior, revealing a rapid and efficient interfacial conversion mechanism. Additionally, we achieve complete, field-free OHE-induced AFM switching in 80 nm Ru/IrMn-based exchange-bias magnetic tunnel junctions (EB-MTJs), with an ultrafast 0.2 ns write speed and low energy consumption. These results establish a viable route for orbitronic manipulation of AFMs and offer a promising approach for ultrafast, low-power, and scalable spintronic devices.
PMID:
41032259
Bibliographic data and abstract were imported from PubMed on 01 Oct 2025.
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