Persistent Ferroelectric Retention of Ferroelectric BiFeO₃ Thin Films.

Authors

Yu Tian, Jiajia Liao, Yuxin Fan, Yueling Zhang, Wenwen Ma, Tingdong Zhang, Zhaoli Zeng, Yichun Zhou, Xiaoming Shi, Aiji Wang

Published in

Nano letters. Oct 19, 2025. Epub Oct 19, 2025.

Abstract

Ferroelectrics exhibiting robust and controllable polarization have attracted significant attention for next-generation memory technologies. However, these materials are often plagued by polarization relaxation within days to weeks. Here, we demonstrate exceptional long-term stability in as-grown mosaic-domain BiFeO₃ thin films, showing virtually no measurable degradation in electro-writing nanodomains over 1 year (a >200 times improvement versus conventional uniform-domain ferroelectrics). Notably, scanning transmission electron microscopy and scanning probe microscopy reveal that the high-quality film achieves permanent polarization retention while preserving low operational voltage (5 V), half the voltage of previous ferroelectrics with comparable polarization retention. The thermodynamically balanced energy landscape of upward/downward polarization states within the mosaic domains stabilizes written domains without increasing the polarization switching activation field, dissolving the trade-off between energy efficiency and stability. These findings pave the pathway for high-density and low-energy-consumption ferroelectric memory and advanced multifunctional nanodevices.

PMID:
41111234
Bibliographic data and abstract were imported from PubMed on 20 Oct 2025.

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