High-temperature memristors enabled by interfacial engineering.

Authors

Jian Zhao, Cameron S Jorgensen, Krishnamurthy Mahalingam, Cynthia Bowers, Wataru Sugimoto, Kai Ito, Seung Ju Kim, Ruoyu Zhao, Yichun Xu, Han-Ting Liao, Rajiv K Kalia, Aiichiro Nakano, Kohei Shimamura, Fuyuki Shimojo, Priya Vashishta, Ajit K Roy, Ning Ge, Miao Hu, R Stanley Williams, Qiangfei Xia, Sabyasachi Ganguli, J Joshua Yang

Published in

Science (New York, N.Y.). Pages eaeb9934. Mar 26, 2026. Epub Mar 26, 2026.

Abstract

Non-volatile memories (NVM) that operate reliably at high temperature are essential for electronics in extreme environments. Here, we reported graphene (Gra)/HfO_x/tungsten (W) memristors that operated reliably up to 700 °C with an ON/OFF current ratio >10³, data retention >50 hours and endurance >10⁹ switching cycles. Transmission electron microscopy (TEM) revealed significant W diffusion into the inert platinum (Pt) electrode of conventional Pt/HfO_x/W memristors after high-temperature annealing, which was an effect responsible for the thermal failure of conventional devices but not observed in Gra/HfO_X/W devices. First-principles calculations attributed the enhanced thermal stability to weaker W adsorption and higher surface diffusion barriers on graphene than metals like Pt. These results underscore the critical role of interfacial engineering and potential of 2D materials in enabling reliable high-temperature NVM technologies.

PMID:
41886537
Bibliographic data and abstract were imported from PubMed on 27 Mar 2026.

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