Solvent-Assisted Heterojunction Interface Passivation via DMSO Modification for High-Efficiency Sb₂Se₃ Solar Cells.

Authors

Xiaoyang Liang, Yixin Sui, Hualong Xiao, Liangliang Zhang, Xinzhou Lu, Anming Mo, Wei Dang, Zheng Zhang, Lin Yang, Yingnan Guo, Yaohua Mai, Zhiqiang Li

Published in

Small (Weinheim an der Bergstrasse, Germany). Pages e74251. Jun 17, 2026. Epub Jun 17, 2026.

Abstract

Antimony selenide (Sb₂Se₃) has recently surpassed the benchmark of 10% power conversion efficiency, establishing itself as a highly promising photovoltaic absorber. However, its further development is largely limited by severe performance losses within the space charge depletion region near the heterojunction interface. Here, we introduce a solvent-assisted annealing strategy utilizing dimethyl sulfoxide (DMSO) to effectively passivate the surface defects. The DMSO treatment simultaneously removes surface oxides and incorporates trace sulfur into the near-surface region, thereby neutralizing surface states. Notably, the incorporated sulfur passivates deep-level selenium vacancy defects V_Se2 and V_Se3. Theoretical calculations reveal that DMSO chemisorbs onto Sb₂Se₃ via strong Sb─S bonding, which weakens the native Sb─Se lattice and facilitates controlled surface etching. This passivation of interface regions significantly improves the heterojunction quality, yielding a champion power conversion efficiency of 10.48%, corresponding to a 17% relative improvement over the control device (8.99%). This work presents a simple yet effective route to defect mitigation in Sb₂Se₃ photovoltaics, supporting their development toward practical application.

PMID:
42308380
Bibliographic data and abstract were imported from PubMed on 18 Jun 2026.

Read full publication at:
Please sign in to see all details.

Stats

1-terrible, 9-excellent. How would you rate this publication? Sign in in to submit your rating.

Post a comment

You need to be signed in to post comments. You can sign in here.

Comments

There are no comments yet.