Quantum Light Emission from GaAs_xP_1-x Quantum Dots in Wurtzite GaP Nanowires.

Authors

Paolo De Vincenzi, Robert Andrei Sorodoc, Akant Sagar Sharma, Mario Roggi, Isabella Santanchè, Leonardo Perrini, Enrico Mugnaioli, Riccardo Rurali, Fabio Beltram, Lucia Sorba, Valentina Zannier, Marta De Luca

Published in

ACS applied materials & interfaces. Jun 21, 2026. Epub Jun 21, 2026.

Abstract

Tunable single-photon emitters in nanowires (NWs) are promising building blocks of compact and efficient quantum photonic devices. We report the vapor-liquid-solid growth of wurtzite (WZ) GaAs_xP_1-x (x = 0.7 and 0.9) quantum dots (QDs) embedded in defect-free WZ GaP NWs, showing high crystalline quality and emission in the 630-700 nm wavelength range. Power- and temperature-dependent microphotoluminescence (μ-PL) measurements show well-resolved single excitonic lines with fwhm < 2 meV up to 70 K. Band structure calculations allow effective modeling of the relation between QD size, alloy composition, and QD emission energy. Second-order autocorrelation measurements demonstrate high-purity single-photon emission, with g⁽²⁾(0) = 0.090 ± 0.001 under pulsed excitation at 5 K, and antibunching also under continuous-wave excitation, from 5 to 40 K. Time-resolved measurements reveal lifetimes shorter than one nanosecond. Our results show that WZ GaAs_xP_1-x QDs in GaP NWs have potential as wavelength-tunable quantum light emitters under relaxed cryogenic conditions.

PMID:
42324664
Bibliographic data and abstract were imported from PubMed on 22 Jun 2026.

Read full publication at:
Please sign in to see all details.

Stats

1-terrible, 9-excellent. How would you rate this publication? Sign in in to submit your rating.

Post a comment

You need to be signed in to post comments. You can sign in here.

Comments

There are no comments yet.