Authors
Shulin Zhong, Dacheng Tian, Shengyuan A Yang, Lan Chen, Su-Huai Wei, Yunhao Lu
Published in
Physical review letters. Volume 136. Issue 22. Pages 226703. Jun 05, 2026.
Abstract
Multiferroic materials, which simultaneously exhibit ferroelectric and magnetic orders, offer tremendous potential for next-generation electronic and spintronic devices. Here, we propose a novel design strategy toward a new type of multiferroics: the interlayer self-doping multiferroics. We show that, due to the different band filling preferences of antiferromagnetic and ferromagnetic orderings, homobilayer systems with intermediate band filling exhibit an intrinsic instability toward interlayer self-doping. This results in an antiferromagnetic order in one layer and ferromagnetic order in the other, accompanied by out-of-plane ferroelectricity. Distinct from conventional type-I and type-II multiferroics, the ferroelectric and magnetic orders in interlayer self-doping multiferroics are intrinsically coupled yet not relying on spin-orbit coupling, enabling potential persistence at elevated temperatures. Using first-principles calculations, we validate this mechanism in two concrete systems: bilayer CrTe_{2} and bilayer FeTe. Notably, the multiferroicity in bilayer CrTe_{2} is predicted to operate robustly at room temperature. Our Letter unveils a new type of multiferroics, and it opens a new route for designing 2D ultrathin multiferroics with high transition temperature and robust magnetoelectric response.
PMID:
42330446
Bibliographic data and abstract were imported from PubMed on 23 Jun 2026.
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