High-Efficiency Asymmetric Spin Transport Enabled by Nanocolumn Molecular Semiconductors.

Authors

Shunhua Hu, Tingting Yang, Sai Xu, Lidan Guo, Yong Wang, Rui Zhang, Guangjie Zhang, Xianrong Gu, Yang Qin, Ke Meng, Meng Wu, Xiangpeng Zhang, Ruiheng Zheng, Ankang Guo, Min Li, Cheng Zhang, Kai Wang, Xinghua Shi, Zhixiang Wei, Xiangnan Sun

Published in

Advanced materials (Deerfield Beach, Fla.). Pages e73826. Jun 29, 2026. Epub Jun 29, 2026.

Abstract

Owing to weak spin-orbit coupling, molecular semiconductors are among the few materials supporting room-temperature spin functionality, yet their low spin-transport efficiency (η_s, ∼5%) limits applications. Here, we report molecular spintronic devices featuring vertically asymmetric nanocolumn channels formed by phase separation. These channels confine spins and generate built-in electric fields, boosting room-temperature η_s to 20%-the highest value reported to date, over five times that of unstructured films. Simultaneously, the nanocolumn channels induce pronounced bias-dependent asymmetry, with η_s of 20% at +0.2 V versus 1% at -0.2 V, yielding a record asymmetry factor, significantly outperforming other material systems (e.g., metal oxides, 2D materials, conventional molecular/inorganic semiconductors). This dual achievement of record-high efficiency and strong asymmetry establishes a platform for new spintronic functionalities. As a proof of concept, we demonstrate its potential for information-secure applications via spin-signal encryption elements and two-stage spin true random number generators, integrating structural design with spintronic operation.

PMID:
42371693
Bibliographic data and abstract were imported from PubMed on 29 Jun 2026.

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