Authors
Meiling Hong, Lidong Dai, Haiying Hu, Xinyu Zhang, Wenqing Sun, Bing Lv, Xuefei Liu, Juxiang Shao
Published in
Inorganic chemistry. Jul 07, 2026. Epub Jul 07, 2026.
Abstract
CuTaS3, an important member of the bimetallic chalcogenide family, stands out because of its nontrivial physicochemical properties and potential applications in electronic and optoelectronic devices. Despite the extensive investigations into structural characterizations and device applications, the knowledge about structural and electronic transitions of CuTaS3 under high pressure is deficient. In this work, we filled these research gaps and explored the high-pressure structural, vibrational, and electrical transport properties of CuTaS3 under different hydrostatic environments by virtue of Raman spectroscopy, microarea X-ray diffraction (XRD), and electrical conductivity measurements. Upon nonhydrostatic compression, CuTaS3 experienced two successive phase transitions at 2.2 and 5.4 GPa and sequential metallization at 12.5 GPa. Nevertheless, the pressure-induced structural and electronic transitions of CuTaS3 were unsusceptible to hydrostaticity, which was attributed to the faint deviatoric stress at ∼10.0 GPa under different hydrostatic environments. Upon depressurization, the phase transition was revealed to be incompletely reversible under different hydrostatic environments with the preservation of pressure effects or the existence of a kinetic barrier. Additionally, CuTaS3 exhibited Ohmic behavior at high pressures. These findings on CuTaS3 pave the way for exploring the physicochemical properties of other bimetallic chalcogenides under extreme conditions, thereby facilitating its potential applications in other promising fields.
PMID:
42411305
Bibliographic data and abstract were imported from PubMed on 07 Jul 2026.
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