Interface engineering: a step towards device integration of chalcogenide perovskites.

Authors

Kiruba Catherine Vincent, Shubhanshu Agarwal, Jhoan Ruiz, Myriam Rangel Miranda, Kim Kisslinger, Rakesh Agrawal

Published in

Faraday discussions. Jul 13, 2026. Epub Jul 13, 2026.

Abstract

Chalcogenide semiconductors have played a crucial role in a wide range of applications, including optoelectronics, photovoltaics, sensing, and more. Chalcogenide perovskites have recently emerged as a new and promising addition to this family, offering enhanced stability along with promising properties. The improved stability is achieved at the expense of rigorous synthesis conditions, often requiring high temperatures and sulfur-rich environments. Such aggressive conditions are highly detrimental to most conductive back contacts, thereby severely limiting device integration. In this work, we address this challenge by introducing an ultrathin Al₂O₃ layer as a protective barrier. Al₂O₃ film of a few nanometers was deposited via atomic layer deposition onto a molybdenum substrate, forming a robust interfacial layer that prevents substrate degradation. This interfacial engineering has enabled, for the first time, the deposition of phase-pure BaZrS₃ thin films on conductive substrates without degradation. These results represent a critical step towards the realization of functional chalcogenide perovskite devices.

PMID:
42438892
Bibliographic data and abstract were imported from PubMed on 13 Jul 2026.

Read full publication at:
Please sign in to see all details.

Stats

1-terrible, 9-excellent. How would you rate this publication? Sign in in to submit your rating.

Post a comment

You need to be signed in to post comments. You can sign in here.

Comments

There are no comments yet.