Interfacial Sb Sequestration-Expulsion Enabled by Homojunction-like Layered Structures for Multifunctional Memory.

Authors

Yukun Chen, Lianduan Zeng, Dexu Feng, Liu Liu, He Zhang, Jin Qian, Ruobing Wang, Yusha Shen, Ruirui Liu, Jiwei Zhai, Zhitang Song, Xiao Zhou, Sannian Song

Published in

ACS applied materials & interfaces. Jul 22, 2026. Epub Jul 22, 2026.

Abstract

Elemental antimony (Sb) enables ultrafast crystallization but suffers from poor amorphous stability. Here, we report a Sb/GaSb₄ homojunction-like architecture in which chemically similar yet electronically distinct interfaces regulate phase-change behavior. Increasing interfacial density markedly elevates the crystallization temperature and enhances data retention, accompanied by delayed crystallization and preserved layered structures. We further identify an interfacial sequestration-expulsion mechanism: adjacent Sb layers suppress excess-Sb expulsion from the GaSb₄ matrix, while Ga promotes Sb accommodation and thermally driven redistribution, stabilizing Sb-rich local environments. As a result, devices achieve 5 ns switching, >10⁵ endurance cycles, and low resistance drift. Moreover, interfacial-density scaling enables linear conductance modulation, supporting both high-speed memory and neuromorphic functionality. These findings establish interface-engineered homojunction-like structures as an effective strategy to mitigate phase-change trade-offs and enable multifunctional electronics.

PMID:
42485493
Bibliographic data and abstract were imported from PubMed on 23 Jul 2026.

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