Data-driven elemental descriptors for rational design of high-sensitivity extreme ultraviolet photoresists.

Authors

Jiyuan Liu, Jialiang Wei, Huie Zhu, Xiaojun Peng

Published in

Smart molecules : open access. Pages e70056. May 18, 2026. Epub May 18, 2026.

Abstract

The rational design of high-sensitivity photoresists for extreme ultraviolet (EUV) lithography is hindered by the lack of quantitative, predictive descriptors that link material composition to EUV absorption. Here, we develop a density-free, data-driven approach that quantifies both elemental sensitivity and impact. We introduce elemental sensitivity descriptors, μ _n and A _n , to estimate how elemental doping alters the linear attenuation coefficient and absorbance without requiring density information of the target material. Furthermore, we define elemental impact Δϕ _i to evaluate whether an element acts as a positive or negative contributor when embedded in high-absorption compounds. We identify I, Te, In, Sn, Sb, Cs, and Bi as top candidates for EUV photoresists, while revealing the detrimental role of H and C as matrix components. This work provides a generalizable strategy for EUV photoresist design.

PMID:
42500729
Bibliographic data and abstract were imported from PubMed on 25 Jul 2026.

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