Authors
Zhipeng Liu, Yiling Hu, Zhi Liu, Jun Zheng, Yuhua Zuo, Tao Men, Guangze Zhang, Buwen Cheng
Published in
Optics letters. Volume 51. Issue 15. Pages 4360-4363. Aug 01, 2026.
Abstract
In this work, we demonstrate a high-performance GeSn photodetector fabricated on a silicon-on-insulator substrate using selective epitaxial growth. This method effectively confines the growth of the GeSn material to predefined regions, which enhances material quality and facilitates large-scale integration. The fabricated photodetector exhibits a high responsivity of 0.53 A/W and 0.23 A/W at 1550 nm and 1630 nm, respectively. Furthermore, the device demonstrates a low dark current density of 0.35 A/cm² and a bandwidth of 16 GHz. These results indicate that GeSn grown by selective epitaxy is capable of fabricating high-performance devices.
PMID:
42537188
Bibliographic data and abstract were imported from PubMed on 01 Aug 2026.
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