Authors
E García-Hemme, R Benítez-Fernández, S Duarte-Cano, F Pérez-Zenteno, S Algaidy, C Mata-Alonso, S de Castro-Romero, R García-Hernansanz, J Olea, A Del Prado, E San Andrés, I Mártil, D Pastor
Published in
Physical review letters. Volume 137. Issue 5. Pages 057002. Jul 31, 2026.
Abstract
We report a Si-CMOS-compatible photodiode for room temperature short-wavelength infrared detection. The architecture integrates Te-hyperdoped silicon with light-trapping structures to achieve a breakthrough in sub-band-gap efficiency. Specifically, by combining surface texturing and a back reflector, we boost absorptance to ≈85%, enabling the observation of transport dynamics at room temperature that were previously obscured in planar devices. We report a peak external quantum efficiency of 2.3% at 1.27 μm, exceeding commercial Si-PIN performance by 3 orders of magnitude. The physical origin of this enhancement is attributed to bias-assisted tunneling between the Te impurity band and the Si valence band, evidenced by a distinct spectral shoulder at 0.4-0.6 eV. Our results, supported by a specific detectivity of 4×10^{10} cmHz^{1/2} W^{-1} and 32 μs response times, establish hyperdoped silicon as a viable platform for high-performance, room temperature SWIR photonics.
PMID:
42606459
Bibliographic data and abstract were imported from PubMed on 17 Aug 2026.
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