Ga Doping Enables (110) Facet Control and Surface Passivation of SnO₂ for Efficient and Stable Inverted Perovskite Solar Cells.

Authors

Yishun Feng, Shucheng Qin, Yiyang Wang, Minchao Liu, Yue Zhang, Ruihan Wu, Yao Zhao, Lei Meng, Yongfang Li

Published in

Angewandte Chemie (International ed. in English). Pages e3095986. Aug 23, 2026. Epub Aug 23, 2026.

Abstract

Perovskite solar cells (pero-SCs) with inverted (p-i-n) architecture have advanced rapidly, yet combining high efficiency with long-term operational stability remains challenging, mainly due to commonly used organic cathode buffer layer (CBL) (between C₆₀ electron transporting layer and metal cathode) such as bathocuproine (BCP) with photo-thermal instability. Here, Ga-doped SnO₂ (Ga:SnO₂) is introduced as an inorganic CBL to replace BCP. Mechanistically, Ga incorporation promotes the preferential growth of the (110) facet of SnO₂ nanoparticles, which markedly enhances electrical conductivity and electron mobility of the CBL. It further suppresses non-radiative recombination by passivating surface defects and reducing the interfacial trap density. The improved energy-level alignment at the interface facilitates efficient electron extraction. These synergistic effects-validated by a suite of characterizations-enable inverted pero-SCs with a champion power conversion efficiency of 27.06% (certified 26.77%) and robust stability, retaining 88% of initial efficiency after 1500 h of operation at 85°C. This work demonstrates a viable and scalable pathway to high-performance and long-term stable pero-SCs.

PMID:
42633668
Bibliographic data and abstract were imported from PubMed on 24 Aug 2026.

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