Tunnel field-effect transistors exhibiting performance beyond the Boltzmann thermionic limit.

Authors

Zehan Wu, Ke Yang, Wanqing Meng, Weizhen Wang, Yifei Zhao, Fumei Yang, Ran Ding, Hui Li, Yudong Peng, Zongmeng Yang, Yee Sin Ang, Songhua Cai, Ming Yang, Jiannong Wang, Lain-Jong Li, Jianhua Hao

Published in

Science (New York, N.Y.). Volume 393. Issue 6814. Pages 917-922. Aug 27, 2026. Epub Aug 27, 2026.

Abstract

The International Roadmap for Devices and Systems (IRDS) has identified the tunnel field-effect transistor (TFET) as the most promising next-generation logic device that enables sustainable downscaling in driving voltage and power consumption. Demonstrating an acceptable sub-Boltzmann-limit ON current (namely I₆₀, the current level when a TFET switches to a subthreshold swing level of 60 millivolts per decade) and current-switching ratio has presented a formidable challenge. We report a TFET based on a bismuth/indium selenide (Bi/InSe) heterostructure that exhibits an I₆₀ of up to ~10 microamperes per micrometer and a current-switching ratio of >10⁷. We attribute such promising TFETs to precise material design, clean interfaces fabricated under vacuum, and band engineering based on subthreshold swing physics. Our results demonstrate a high-performance basic building block that meets the IRDS requirements for next-generation integrated circuits.

PMID:
42658935
Bibliographic data and abstract were imported from PubMed on 28 Aug 2026.

Read full publication at:
Please sign in to see all details.

Stats

1-terrible, 9-excellent. How would you rate this publication? Sign in in to submit your rating.

Post a comment

You need to be signed in to post comments. You can sign in here.

Comments

There are no comments yet.