Authors
Xing-Yu Ma, Yan-Dong Guo, Yue Jiang, Xiao-Lu Duan, Kai-Rui Bian, Zhan-Fei Yang, Fan Guo, Hong-Li Zeng, Xiao-Hong Yan
Published in
Physical chemistry chemical physics : PCCP. Aug 31, 2026. Epub Aug 31, 2026.
Abstract
Two-dimensional chalcogenide semiconductors provide an attractive platform for deeply scaled transistors because their atomically thin bodies enable strong electrostatic control and effective suppression of short-channel effects. Here, we systematically investigate the ballistic transport limits of monolayer GeS2 and SnS2 double-gated metal-oxide-semiconductor field-effect transistors (MOSFETs) using density functional theory combined with the nonequilibrium Green-function formalism. Both n- and p-type devices are evaluated at gate lengths of 5, 3, and 1 nm under the 2028 International Technology Roadmap for Semiconductors high-performance (HP) and low-power (LP) requirements. By optimizing the source/drain doping concentration and underlap length, the n-type armchair GeS2 and SnS2 MOSFETs with Lg = 5 nm deliver ultrahigh on-state currents of 5064 and 4557 µA µm-1 for HP applications, and 1072 and 2042 µA µm-1 for LP applications, respectively. Moreover, the intrinsic delay time and power-delay product remain well below the corresponding ITRS limits. Further analysis reveals that the excellent current-driving capability originates from the favorable balance between carrier velocity and density of states associated with the transport-direction effective mass. These findings suggest the potential of monolayer GeS2 and SnS2 as promising channel candidates for extending two-dimensional electronics toward the deeply scaled, energy-efficient post-silicon technology node.
PMID:
42669410
Bibliographic data and abstract were imported from PubMed on 31 Aug 2026.
Read full publication at:
Please sign in
to see all details.
Advertisement
Stats
- Recommendations n/a n/a positive of 0 vote(s)
- Views 3
- Comments 0