Near-Surface Sulfidation-Induced p-n Junction Enabling High-Efficiency Inverted Perovskite Solar Cells.

Authors

Chunyan Lu, Mingjin Li, Wen Li, Haoyun Deng, Jutao Jiang, Pengxi Wang, Biao Yang, Cheng Yang, Xiaodong Li, Ziyang Hu, Wenjun Zhang

Published in

ACS applied materials & interfaces. Aug 27, 2026. Epub Aug 27, 2026.

Abstract

Inverted perovskite solar cells (PSCs) often suffer from inefficient electron extraction due to the intrinsically p-type nature of the perovskite surface at the electron transport layer interface. Here, we report a near-surface sulfidation strategy using dibutyl sulfide (DBS) to induce a surface p-to-n transition, which creates a near-surface electric field that facilitates electron extraction and suppresses interfacial recombination. Simultaneously, the formation of Pb-S coordination bonds passivates undercoordinated Pb2+ defects, reducing nonradiative recombination losses. As a result, DBS-treated inverted PSCs achieve a champion power conversion efficiency of 26.28% with a high open-circuit voltage of 1.191 V. The treated devices also exhibit enhanced thermal stability, retaining 91% of their initial efficiency after more than 700 h of aging at 85 °C in a N2 atmosphere. This work presents a simple yet effective surface engineering approach that simultaneously enhances both the efficiency and stability of inverted PSCs.

PMID:
42678027
Bibliographic data and abstract were imported from PubMed on 01 Sep 2026.

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