Authors
Yurui Li, Jiayi Hu, Panjing Liu, Boyi Liu, Yahui Pang, Luwen Xing, Sheng Li, Bingchen Han, Kaicheng Jia, Haowen Shu, Hailin Peng, Zhongfan Liu, Xingjun Wang, Gengmin Zhang, Jianbo Yin
Published in
Optics letters. Volume 51. Issue 17. Pages 4777-4780. Sep 01, 2026.
Abstract
Integrating more components in one silicon photonic chip is critical for processing exponentially growing data in optical communications and photonic computing. One of the key components in the chip, the electro-optic modulator, suffers from an oversized footprint (in millimeters). Graphene modulators are more compact, with device sizes at hundreds of micrometers. However, conventional graphene-on-top configurations, where graphene only couples to the weak evanescent field of the waveguide, have limited modulation efficiency and hinder the continuing efforts of reducing device footprint. Here, we present a design where graphene layers are positioned inside the optical mode to maximize light-graphene interaction. This architecture enhances the effective refractive index modulation and shows 30% increased efficiency compared to the conventional design, which facilitates a 3 dB bandwidth exceeding 30 GHz. Wafer-scale manufacturing with graphene integrated at the Back End of Line (BEOL) is achieved. As an additional proof-of-concept demonstration, a silicon-platform embedded graphene modulator achieves a modulation efficiency of 0.096 V·cm. We believe this work provides a pathway for graphene integrating to high-density, foundry-level silicon photonic circuits.
PMID:
42679244
Bibliographic data and abstract were imported from PubMed on 02 Sep 2026.
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