Authors
Hyejin Lim, Su Hye Jeong, Chae Bin Lee, Yousang Won, Seungwon Lee, Inho Song, Wooseok Song, Ki-Seok An, Sungwoong Park, Seungju Lee, Soonmin Yim, Yoon Ho Lee, Saewon Kang
Published in
Small methods. Pages e71019. Sep 07, 2026. Epub Sep 07, 2026.
Abstract
Chiral halide perovskites are promising materials for circularly polarized light (CPL) optoelectronics owing to their strong light absorption, long carrier diffusion lengths, and intrinsic chiroptical activity. However, most reported CPL perovskite devices still suffer from limited chiroptical selectivity and poor operational stability, hindering practical applications. Here, we report a facile interfacial passivation strategy using an atomic layer deposition (ALD)-grown AlF3 film for high-performance and stable CPL photodetectors (PDs). The dense AlF3 underlayer modifies the local interfacial environment of the perovskite, promotes grain growth, and reduces defect sites in the chiral perovskite films. Consequently, the AlF3-based films exhibit enhanced apparent chiroptical properties, with circular dichroism (CD) and circularly polarized photoluminescence (CPL-PL) g-factors increasing by approximately 3.8-fold and 2-fold, respectively, compared with pristine films. CPL PDs fabricated on the AlF3 underlayer achieve a photoresponsivity of 54 mA W-1, a specific detectivity of 1.68 × 1011 Jones, and a photocurrent g-factor of 0.48, representing an 84% enhancement over pristine devices. Interfacial AlF3 passivation also significantly improves device durability, providing a T70 operational lifetime more than 9.3 times longer under ambient conditions. This work demonstrates an effective interface-engineering strategy for simultaneously enhancing chiroptical selectivity, device performance, and operational stability in CPL perovskite optoelectronics.
PMID:
42706855
Bibliographic data and abstract were imported from PubMed on 08 Sep 2026.
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