Authors
Xiangming Xu, Sebastian Pazos, Dekang Zhu, Yue Ping, Ning Chu, Mario Lanza, Husam N Alshareef
Published in
Advanced materials (Deerfield Beach, Fla.). Pages e74953. Sep 10, 2026. Epub Sep 10, 2026.
Abstract
Resistive-switching devices are essential building blocks for advanced multifunctional integrated circuits (ICs), with four major switching mechanisms (ion migration, phase change, magnetization orientation, and ferroelectric polarization) having been extensively studied, each facing inherent limitations for practical applications. Herein, we disclose an interfacial gap switching mechanism in a two-terminal Ti3C2Tx/MoS2 device, fundamentally distinct from those conventional mechanisms. The switching mechanism relies on the interfacial gap modulation between the metallic MXene Ti3C2Tx layer and semiconducting MoS2 layer under applied bias, leading to reversible switching between low resistance state and high resistance state. The gap modulation phenomenon was further observed in three-terminal transistor devices. The working principle takes advantage of MXene Ti3C2Tx with high concentration of negative charges, electrostatically interacting with MoS2 triggered by bias or gating dynamically. Further optimization of memristor device exhibited ultra-low cycle-to-cycle variation, with a set voltage standard deviation of 40 mV and coefficient of variation of 2.31%, outperforming most reported 2D memristors. This discovery of gap modulation provides new insights into memristor device physics and offers a unique idea to build 2D memristor architecture for non-volatile memory related applications.
PMID:
42723217
Bibliographic data and abstract were imported from PubMed on 11 Sep 2026.
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