Authors
Yawei Wang, Xingyu Lu, Sur Lig, Lingling Wang, Hancheng Zhu, Guorui Wang, Yinglin Wang, Changhua Wang, Xintong Zhang, Yichun Liu
Published in
ACS applied materials & interfaces. Sep 16, 2026. Epub Sep 16, 2026.
Abstract
Efficient carrier extraction at the CZTSSe/CdS heterojunction is essential for high-performance CZTSSe solar cells. However, the uneven distribution of nucleation sites on polycrystalline CZTSSe often leads to nonuniform CdS nucleation and growth, resulting in defect-rich heterojunctions and enhanced interfacial recombination. Herein, we report a small molecule thiol self-assembled interlayer (thiol-SAI) strategy to regulate CdS nucleation and growth on CZTSSe through the directional interaction between thiol-containing molecules and the absorber surface. By comparing thiol molecules bearing hydroxyl, carboxyl, amino, and sulfonic acid terminal groups, sodium 2-mercaptoethanesulfonate (Mesna) is identified as the most effective interfacial modifier. The thiol group (-SH) anchors onto the CZTSSe surface to form a Mesna SAI with outward-oriented sulfonic acid functionalities. This interlayer significantly improves surface wettability and promotes uniform heterogeneous nucleation, enabling the growth of a compact, highly crystalline, and low-defect CdS buffer layer with enhanced grain-boundary coverage. Consequently, interfacial recombination is suppressed, and the heterojunction recombination activation energy increases from 59.27 to 69.50 meV. As a result, the power conversion efficiency is improved from 11.50% to 12.93%. This work demonstrates that thiol-SAI-assisted interface engineering provides an effective strategy for coordinating buffer-layer growth with heterojunction quality, offering a general molecular-level approach for optimizing charge extraction in solution-processed thin-film solar cells.
PMID:
42748008
Bibliographic data and abstract were imported from PubMed on 17 Sep 2026.
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