Mixed-Dimensional Epitaxy of Aligned 1D vdW Nanowires on Low-Symmetry 2D vdW Materials: Sb₂X₃ on ReX₂ (X = S, Se).

Authors

Maayan Persky-Poss, Noya Ruth Itzhak, Shahar Bialer, Katya Rechav, Iddo Pinkas, Olga Brontvein, Ifat Kaplan-Ashiri, Irit Rosenhek-Goldian, Nir Kampf, Ernesto Joselevich

Published in

Small (Weinheim an der Bergstrasse, Germany). Pages e75784. Sep 17, 2026. Epub Sep 17, 2026.

Abstract

The creation of heterostructures from materials, and in particular van der Waals (vdW) materials, of different dimensionalities enables not only a combination of their intrinsic properties but also the emergence of novel functionalities absent in the individual components. However, most reported mixed-dimensional heterostructures are produced by physical assembly, with limited control over the materials' respective orientation and hence ill-defined interfaces. Here we demonstrate the epitaxial growth of a prototypical series of mixed-dimensional vdW heterostructures consisting of one-dimensional (1D) vdW materials Sb₂X₃ nanowires (X = S, Se) on low-symmetry two-dimensional (2D) vdW materials ReX₂. The low symmetry of the substrate enables aligned growth, preferentially along the ±[001] direction of Sb₂X₃ and ±[100] of ReX₂, with well-defined interfaces consistent with epitaxy. Notable findings include strong correlation between nanowire morphology and crystallographic orientation, with stacking fault defects acting as a strain relaxation mechanism. To validate the functional potential of these oriented interfaces, optoelectronic characterization of Sb₂S₃/ReSe₂ p-n photodiodes showed photovoltaic behavior with 0.864 A/W responsivity at zero bias. These results establish vdW epitaxy on low-symmetry substrates as a promising strategy for the creation of aligned mixed-dimensional vdW heterostructures with well-defined interfaces, with potential applications in optoelectronics.

PMID:
42752955
Bibliographic data and abstract were imported from PubMed on 18 Sep 2026.

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