Authors
Xiao Wang, Yihua Chong, Qiuwen San, Qingli Lin, Zhijie Yan, Wenjing Zhang, Zimo Hu, Yuting Huang, Lei Wang, Huaibin Shen
Published in
Nanoscale. Sep 18, 2026. Epub Sep 18, 2026.
Abstract
Quantum dot light-emitting diodes (QD-LEDs) have emerged as one of the most promising technologies for next-generation displays and solid-state lighting. However, the commercialization of full-color QD-LEDs is severely limited by the low efficiency and short lifetime of blue devices, mainly stemming from insufficient exciton radiative recombination caused by surface defect-induced carrier trapping and electron leakage from QDs to hole transport layers (HTLs). We introduce a surface modification strategy for QDs using inorganic ZnI2-derived iodide (I-) as a functional ligand to address these issues. The iodide (I-) effectively passivates QD surface defects, suppressing defect-assisted nonradiative recombination. More importantly, the electron-accepting nature of iodide induces a downward shift of QD energy levels, increasing the electron transport barrier from QDs to the HTL, thereby reducing electron leakage. Benefiting from this synergistic effect, the resulting blue QD-LEDs achieve a maximum external quantum efficiency (EQE) of 26.5%, ranking among the highest values reported for blue QD-LEDs emitting in the 450-480 nm range. Meanwhile, the device operational lifetime is extended two fold compared with the control devices. This work provides an effective strategy for realizing high-performance blue QD-LEDs and accelerates the commercialization of full-color QD-LED technology.
PMID:
42757979
Bibliographic data and abstract were imported from PubMed on 18 Sep 2026.
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