Authors
Shuo Lei, Shichen Zhang, Zhipeng Zheng, Miao Cai, Shun Tang, Xuguang Guo, Yiming Zhu
Published in
Advanced science (Weinheim, Baden-Wurttemberg, Germany). Pages e78038. Sep 27, 2026. Epub Sep 27, 2026.
Abstract
Optoelectronic synapses integrating optical sensing and memory functions are promising building blocks for neuromorphic visual systems. Here, an optoelectronic synaptic transistor based on a MoS2/h-BN/Au heterostructure with Au as the floating gate is demonstrated. Benefiting from the high work function of the metal floating gate (MFG), the device exhibits efficient non-volatile charge storage with a large memory window of 97.6 V and a stored charge density of 7.0 × 1012 cm-2. Under optical stimulation, the device shows pronounced wavelength-dependent synaptic plasticity. The device exhibited data retention exceeding 3000 s and cycling endurance over 1600 programming/erasing cycles. Separately, reproducible programming/erasing operation was observed after 200 days of storage under ambient conditions. In particular, 450 nm illumination generates high-energy photocarriers in the MoS2 channel, which more effectively modulate the charge state of the MFG through carrier transfer across the h-BN barrier, leading to stable long-term potentiation behavior. More importantly, grounding the MFG suppresses the non-volatile optical synaptic response, highlighting the dominant contribution of floating-gate charge storage over interfacial trapping effects. Using experimentally measured weight-update characteristics, a hardware-aware neural-network simulation achieves 98.4% test accuracy on MNIST handwritten-digit classification. This work highlights the potential of the MFG architecture for integrated optoelectronic memory and neuromorphic vision applications.
PMID:
42801561
Bibliographic data and abstract were imported from PubMed on 28 Sep 2026.
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