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Speed-Adaptive In-Sensor Reservoir Computing via Gate-Tunable MoS2-x/MoTe2 Heterojunction Dynamics.

Created on 06 Oct 2026

Authors

Dongyue Li, Wenbo Zhang, Jie Xing, Yehua Yang, Jinsong Li, Lu Wang, Huiying Hao, Hao Liu, Jingjing Dong, Dashan Shang

Published in

ACS applied materials & interfaces. Oct 06, 2026. Epub Oct 06, 2026.

Abstract

Compact, low-power optoelectronic devices that integrate sensing, memory, and computing have shown substantial potential for realizing software-hardware co-design in artificial intelligence systems. However, existing optoelectronic devices integrating multiple functions typically suffer from fixed carrier dynamics that cannot be reconfigured after fabrication, which imposes a significant challenge on machine vision. Here, we overcome this challenge with a single MoS2-x/MoTe2 van der Waals heterojunction that delivers both self-powered broadband photodetection with superb performance and gate-tunable synaptic plasticity in one device. By modulating the Fermi level across sulfur vacancy defect states, we achieve continuous control of photocurrent decay dynamics over a 25-fold range-enabling speed-adaptive in-sensor reservoir computing that matches relaxation kinetics to human motion, attaining 100% recognition accuracy for running, side-jumping, and walking. A random pruning strategy further reduces computational cost by three orders of magnitude while preserving 95% accuracy, demonstrating the system's potential for edge deployment. This work suggests that defect-engineered van der Waals heterojunctions offer a promising materials platform for speed-adaptive neuromorphic vision systems integrating sensing, memory, and computing capabilities.

PMID:
42832727
Bibliographic data and abstract were imported from PubMed on 06 Oct 2026.

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