Authors
Shishi Liu, Zhuting Hao, Mira Kreßler, Oguzhan Yücel, Lotte Polling, Adrián Dewambrechies, Wesley Pietsch, Philip Nickl, Felix Fels, Kevin Pagel, Markus R Heinrich, Patryk Kusch, Kirill Bolotin, Xin Chen, Siegfried Eigler
Published in
Advanced materials (Deerfield Beach, Fla.). Pages e75239. Oct 06, 2026. Epub Oct 06, 2026.
Abstract
Breaking out-of-plane symmetry in graphene is essential to realize electrostatic control in next-generation electronic devices. While Janus graphene, which bears chemically distinct top and bottom faces, is a promising architecture, establishing a controllable fabrication route and directly linking asymmetric chemistry to electronic transport remains challenging. In this study, we present a resist-free, interface-selective laser-writing strategy that facilitates stepwise bottom-to-top covalent functionalization of graphene and enables controlled access to top-, bottom-, and asymmetric dual-side configurations. Raman spectroscopy verifies that this Janus configuration reaches a substantial degree of functionalization, exhibiting a Raman-derived defect distance (LD) of approximately 1.5 nm. Kelvin probe force microscopy reveals configuration-dependent electrostatic responses, with a change of contact potential difference of approximately 225 mV for Janus graphene. Back-gated field-effect transistors further reveal pronounced changes in charge transport, with the residual carrier density increasing to 5.92 × 1012 cm-2 in Janus graphene. Notably, comparison of the investigated configurations reveals a configuration-dependent relationship between interfacial electrostatics and charge transport. Furthermore, lithographically pre-patterned substrates enable spatially programmable Janus architectures via single-step laser writing, providing a scalable platform for engineering symmetry-broken two-dimensional electronic materials.
PMID:
42839713
Bibliographic data and abstract were imported from PubMed on 07 Oct 2026.
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