Quantum Hall Effect in Stoichiometry-Engineered $\beta$ - ${\mathrm{Ag}}_2\mathrm{Te}$.

Authors

Mizuki Ohno, Veronica Show, Reiley Dorrian, Darryl Shima, Ganesh Balakrishnan, Joseph Falson

Published in

Advanced materials (Deerfield Beach, Fla.). Pages e75162. Oct 07, 2026. Epub Oct 07, 2026.

Abstract

Accessing surface quantum transport in topological insulators is hampered by residual bulk conduction arising from lattice defects. Here, we demonstrate a novel synthesis pathway for realizing high-mobility $\beta$ - ${\mathrm{Ag}}_2\mathrm{Te}$ thin films in which surface transport is dominant. An in situ room-temperature Te treatment modifies the film stoichiometry, enabling continuous tuning of the sheet carrier density over more than an order of magnitude through the charge-neutrality point without an external gate electrode. In the lower-carrier-density films, a fully developed $\nu =1$ quantum Hall state is observed, and Landau-level energies extracted across samples collapse onto the $E_N=v_F\sqrt{2e\hslash NB}$ relation, providing evidence for the massless Dirac dispersion of the top and bottom surface states. These results establish stoichiometry engineering as a lithography- and gate-free approach to accessing quantum Hall transport in epitaxial topological-insulator thin films.

PMID:
42844968
Bibliographic data and abstract were imported from PubMed on 08 Oct 2026.

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