Authors
Wanshou Sun, Baili Qiu, Jiaming Li, Haibing Xiao, Yafei Yu, Qingmao Zhang
Published in
Nanophotonics (Berlin, Germany). Volume 15. Issue 13. Pages e70176. Epub Jun 26, 2026.
Abstract
With the widespread adoption of silicon photonic chips in optical-electrical co-packaging, residual stresses induced by femtosecond laser processing in thick bulk silicon substrates have become a critical factor affecting device performance and reliability. However, existing stress characterization techniques struggle to simultaneously achieve high spatial resolution, high sensitivity, and environmental robustness, leaving the subtle stress fields within the heat-affected zone largely "hidden." To address this challenge, we propose a noncontact stress detection method based on frequency domain weak value amplification. The approach leverages the photoelastic effect to convert localized stress into birefringence-induced phase shifts, which are then read out with high sensitivity via weak measurement. Experiments demonstrate that the method achieves a pascal-level stress detection limit of 0.37 kPa, reveals a quantitative relationship between laser-deposited energy and residual stress magnitude, and further resolves the weak stress gradients and local anisotropy within the heat-affected zone of femtosecond laser-processed silicon samples. Its spatial resolution is nearly an order of magnitude higher than that of confocal laser scanning microscopy. This work provides a new tool for high-precision, in situ stress monitoring in semiconductor manufacturing.
PMID:
42846107
Bibliographic data and abstract were imported from PubMed on 08 Oct 2026.
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