Atom-Precision Synthesis of MoS₂/WS₂ Lateral Heterostructures for Prolonged Excitonic Lifetime.

Authors

Yibiao Feng, Yachao Li, Jian Yang, Yinxian Wang, Yang Yang, Boyu Xu, Tiantian Zhang, Yumin Li, Xiaoyang Cui, Chang Li, Jiacai Nie, Wenkai Zhang, Ruifen Dou

Published in

Small (Weinheim an der Bergstrasse, Germany). Pages e76155. Oct 09, 2026. Epub Oct 09, 2026.

Abstract

Transition metal dichalcogenide (TMD) lateral heterostructures provide unique platforms to study nanoscale physics, but progress is limited by the difficulty of producing high-quality interfaces, which require atomic-precision growth rather than simple stacking. We report a controllable two-step chemical vapor deposition (CVD) process for directed epitaxy growth of MoS₂/WS₂ monolayer lateral heterostructures. Atom-resolution scanning tunneling microscopy measurements demonstrate an atomically sharp, defect-free MoS₂/WS₂ interface formed along the sulfur zigzag edge of MoS₂, indicating an atomic-substitution-nucleation growth mechanism. Domain sizes of both MoS₂ and WS₂ can be precisely tuned from several to hundreds of micrometers. The zig-zag interface creates an intermediate energy level at the junction, prolonging photogenerated carrier recombination lifetimes, in agreement with theoretical band-structure calculations. This work establishes a scalable synthesis route to high-quality TMDs lateral heterostructures with an atomic-scale shape interface and tunable domain sizes, accelerating the applications in electronic and optoelectronic devices.

PMID:
42852937
Bibliographic data and abstract were imported from PubMed on 09 Oct 2026.

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