Authors
Ping He, Cheng Zhang Qi, Meng Jin, Hong Fei Mu, Peng Min, Zhong-Zhen Yu, Hao-Bin Zhang
Published in
Advanced materials (Deerfield Beach, Fla.). Pages e75143. Oct 13, 2026. Epub Oct 13, 2026.
Abstract
Low infrared emissivity materials (i.e., metallic materials) are of significance for thermal radiation regulation. However, the easy-corrosion susceptibility and poor chemical stability are common bottleneck issues that affect their applications. We report a versatile electronic structure modulation strategy for low infrared (IR) emissivity graphene by engineering the surface chemistry of precursor graphene oxide and the followed reduction/doping process. The fabrication protocols minimize the irreparable disruption of the intrinsic graphitic structure and enable controllable assembly of nanosheets by suppressing formation of carboxyl groups. More significantly, the convenient reduction and halogen doping effects synergistically minimize electron scattering and enhance interfacial charge transport. The low-defective graphitic structure and the ordered multiscale architecture, as well as halogen doping effect, afford exceptional carrier mobility (∼27.1 cm2 V-1s-1), carrier density (5.73 × 1020 cm-3), and electrical conductivity comparable to highly oriented pyrolytic graphite. Surprisingly, the anomalous metallic response gives the lowest IR emissivity (0.15, 8-14 µm) for carbon materials, comparable to MXene and traditional metallic materials. The large-scale processability and outstanding long-term stability under chemical conditions offer new insights for the potential infrared applications of graphene materials.
PMID:
42867400
Bibliographic data and abstract were imported from PubMed on 14 Oct 2026.
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