Structural and Esaki-Diode-like Electrical Properties of PLD-Grown 2D MoS2 Film on MBE Grown AlN/Si(111) Heterostructures.

Authors

Štefan Chromik, Marianna Španková, Martin Moško, Alica Rosová, Peter Švec, Maroš Gregor, Marcel Talacko, Edmund Dobročka, Gabriel Vanko, Marián Precner, Salvatore Ethan Panasci, Eric Frayssinet, Yvon Cordier, Filippo Giannazzo

Published in

ACS applied materials & interfaces. Nov 02, 2026. Epub Nov 02, 2026.

Abstract

MoS2 thin films were synthesized via pulsed laser deposition (PLD) onto AlN/Si(111) templates, where the AlN buffer layers (110 and 200 nm thick) were grown by molecular beam epitaxy. We achieved excellent MoS2 thickness uniformity (≈3 monolayers) and confirmed the conformal coverage of the PLD-grown films by Raman mapping. Transmission electron microscopy analysis confirmed the epitaxial character of the AlN film and the presence of an ultrathin aluminum oxynitride layer on its surface. Following X-ray photoelectron spectroscopy analysis, oxygen impurities were confirmed in the bulk AlN film as well. Heterojunctions between the ultrathin MoS2 film and AlN, investigated by current-voltage characterization of vertical diode structures, exhibit Esaki-diode-like behavior with a negative-resistance zone. A diagram of the energy bands and Fermi levels in the heterostructure composed of the thick oxygen-doped AlN film sandwiched between the MoS2 and Si electrodes was proposed, and the observed Esaki-diode-like current-voltage characteristic was attributed to electron tunneling from the oxygen impurity band in the AlN film into the valence band of the degenerate p-MoS2 film.

PMID:
42967222
Bibliographic data and abstract were imported from PubMed on 01 Nov 2026.

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