Authors
Yu Sun, Muyang Li, Nan Han, Zeyuan Wang, Xiaoqing Jiang, Jie Li, Yafei Ning, Klaus Leifer, Ming Gao, Jihui Fan, Mingyang Wang, Hu Li, Aimin Song
Published in
ACS applied materials & interfaces. Nov 09, 2026. Epub Nov 09, 2026.
Abstract
Self-powered photodetectors stand as a cornerstone for next-generation low-power electronics, with promising applications in optical communications, environmental monitoring, night vision, and beyond. However, achieving high performance in these devices, particularly under elevated temperatures, remains a persistent challenge. Herein, a short-wavelength infrared (SWIR) self-powered photodetector based on semiconducting graphene nanoribbons (GNRs)/germanium (Ge) vertical heterojunction is presented, demonstrating high-performance detection at 1550 nm. Benefiting from the combined effects of the built-in electric field and interfacial photogating, the photodetector achieves a responsivity of 10.21 A/W, a detectivity of 2.36 × 1011 Jones, and an external quantum efficiency (EQE) of 817% in self-powered mode. Under a reverse bias of -3 V, the photodetector delivers a responsivity of 167.3 A/W, a detectivity of 1.45 × 1010 Jones, and an EQE of 104%. Notably, the device retains a measurable photoresponse at temperatures up to 95 °C, with responsivities of 3 A/W at -3 V bias and 0.1 A/W at zero bias. Together with the demonstrated self-powered infrared imaging capability, our results provide a promising strategy for high-performance, thermally robust SWIR photodetection in demanding environments.
PMID:
43002194
Bibliographic data and abstract were imported from PubMed on 09 Nov 2026.
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